Effects of 1.0-11.5 MeV Electron Irradiation on GaInP/GaAs/Ge Triple-junction Solar Cells for Space Applications

被引：9

作者：

Wang Rong ^{[1
,2
]}

Lu Ming ^{[1
,2
]}

Yi Tian-Cheng ^{[1
,2
]}

Yang Kui ^{[1
,2
]}

Ji Xiao-Xia ^{[1
,2
]}

机构：

[1] Beijing Normal Univ, Coll Nucl Sci & Technol, Key Lab Beam Technol & Mat Modificat, Minist Educ, Beijing 100875, Peoples R China

[2] Beijing Normal Univ, Beijing Radiat Ctr, Beijing 100875, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2014年 / 31卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Electrons - Semiconducting gallium - Current voltage characteristics - III-V semiconductors - Semiconductor alloys - Space applications - Electron energy levels - Solar cells - Degradation - Gallium arsenide;

D O I：

10.1088/0256-307X/31/8/086103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

GaInP/GaAs/Ge triple-junction solar cells are irradiated with 1.0, 1.8, and 11.5 MeV electrons with fluence ranging up to 3 x 10(15), 3 x 10(15), and 3 x 10(14) cm(-2), respectively. Their performance degradation effects are analyzed by using current-voltage characteristics, spectral response measurements, and electron irradiation-induced displacements. The degradation rates of the maximum power and the spectral response of the solar cells increase with the electron fluence, and also increase with the increasing electron energy. It is observed that the spectral response of the GaAs middle cell degrades more significantly than that of the GaInP top cell.

引用

页数：3

共 7 条

[1]

Anspaugh B. E., 1996, GAAS SOLAR CELL RAD

[2] The effects of electron irradiation on triple-junction Ga0.5In0.5P/GaAs/Ge solar cells [J].