Quantum dots to double concentric quantum ring structures transition

被引：4

作者：

Bietti, S. ^{[1
]}

Somaschini, C. ^{[1
]}

Abbarchi, M. ^{[2
]}

Koguchi, N. ^{[1
]}

Sanguinetti, S. ^{[1
]}

Poliani, E. ^{[1
]}

Bonfanti, M. ^{[1
]}

Gurioli, M. ^{[2
]}

Vinattieri, A. ^{[2
]}

Kuroda, T. ^{[3
]}

Mano, T. ^{[3
]}

Sakoda, S. ^{[3
]}

机构：

[1] Univ Milano Bicocca, L NESS, Dept Mat Sci, Via Cozzi 53, I-20125 Milan, Italy

[2] Univ Florence, LENS, Dept Fis, I-50019 Sesto Fiorentino, Italy

[3] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050047, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4 | 2009年 / 6卷 / 04期

关键词：

MODIFIED DROPLET EPITAXY; GAAS;

D O I：

10.1002/pssc.200880616

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Making use of the droplet-epitaxial technique, we realized a series of GaAs/AlGaAs nanostructured samples, starting from the same initial Ga droplet configuration, in which the nanostructure morphologies are progressively changed, via the As partial pressure provided during the growth, from islands, to single rings and, eventually, to concentric ring structures. We report a detailed characterization of the different structure morphologies, electronic structures and carrier dynamics via AFM and photoluminescence measurements as well as through theoretical simulations. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：928 / +

页数：2

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