7.2-kV/60-A Austin SuperMOS: An Enabling SiC Switch Technology for Medium Voltage Applications

被引:0
作者
Zhang, Liqi [1 ]
Sen, Soumik [1 ]
Guo, Zhicheng [1 ]
Zhao, Xin [1 ]
Huang, Alex Q. [1 ]
Song, Xiaoqing [2 ]
机构
[1] Univ Texas Austin, Semicoductor Power Elect Ctr, Austin, TX 78712 USA
[2] ABB USCRC, Raleigh, NC USA
来源
2019 IEEE ELECTRIC SHIP TECHNOLOGIES SYMPOSIUM (ESTS 2019): EMERGING TECHNOLOGIES FOR FUTURE ELECTRIC SHIPS | 2019年
关键词
medium voltage; SiC power switch; SiC MOSFET; series connection; gate pattern; soft-switching; hard-switching; MODULE;
D O I
10.1109/ests.2019.8847863
中图分类号
U6 [水路运输]; P75 [海洋工程];
学科分类号
0814 ; 081505 ; 0824 ; 082401 ;
摘要
In order to enable medium voltage applications at an operation voltage of 5 kV level, a cost-effective 7.2kV/60A Austin SuperMOS SiC power switch is developed. Static and dynamic performance is characterized at various voltage and current levels. Excellent dynamic performance are demonstrated with high dV/dt ranging from 60kV/us and 122kV/us. The output charge of the 7.2kV/60A Austin SuperMOS is also measured to enable accurate loss estimation. Unique gate switching patterns are identified and analyzed for the first time which facilitates the reduction of third quadrant conduction loss during converter deadtime.
引用
收藏
页码:523 / 529
页数:7
相关论文
共 33 条
  • [1] Aggeler D, 2008, APPL POWER ELECT CO, P801
  • [2] Dv/Dt-Control Methods for the SiC JFET/Si MOSFET Cascode
    Aggeler, Daniel
    Canales, Francisco
    Biela, Juergen
    Kolar, Johann W.
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2013, 28 (08) : 4074 - 4082
  • [3] Balancing Circuit for a 5-kV/50-ns Pulsed-Power Switch Based on SiC-JFET Super Cascode
    Biela, Juergen
    Aggeler, Daniel
    Bortis, Dominik
    Kolar, Johann W.
    [J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 2012, 40 (10) : 2554 - 2560
  • [4] Bolotnikov A., 2015, ICSCRM
  • [5] Bolotnikov A, 2015, APPL POWER ELECT CO, P2445, DOI 10.1109/APEC.2015.7104691
  • [6] Casady J.B., 2015, Proceedings of PCIM Europe 2015
  • [7] International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, P1
  • [8] Research on a 4000-V-Ultrahigh Input-Switched-Mode Power Supply Using Series-Connected MOSFETs
    Chen, Xiliang
    Chen, Wenjie
    Yang, Xu
    Han, Yaqiang
    Hao, Xiang
    Xiao, Tianluan
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 33 (07) : 5995 - 6011
  • [9] Stacked high voltage switch based on SiCVJFETs
    Friedrichs, P
    Mitlehner, H
    Schörner, R
    Dohnke, KO
    Elpelt, R
    Stephani, D
    [J]. ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS, 2003, : 139 - 142
  • [10] Gao B, 2018, 2018 IEEE 6TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), P319, DOI 10.1109/WiPDA.2018.8569146