Transfer patterning of pentacene for organic thin-film transistors

被引：40

作者：

Park, S. Young ^{[1
]}

Kwon, Taegeun ^{[1
]}

Lee, Hong H. ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 151742, South Korea

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 14期

关键词：

D O I：

10.1002/adma.200600206

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A simple and economical way of patterning pentacene (see figure) for the fabrication of organic thin-film transistors (TFTs) is described. In this transfer patterning technique a pentacene film deposited on a patterned "rigiflex" mold is transferred to the surface of an insulating gate dielectric. The carrier mobility of such a TFT is shown to be similar to that of a reference device fabricated using a shadow-mask technique.

引用

页码：1861 / +

页数：5

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