Dimethylgallium Isopropoxide as a New Volatile Source for ALD and MOCVD of Ga2O3

被引：5

作者：

Lee, H. ^{[1
]}

Kim, K. ^{[1
]}

Woo, J-J. ^{[1
]}

Jun, D-J. ^{[1
]}

Park, Y. ^{[1
]}

Kim, Y. ^{[1
]}

Lee, H. W. ^{[2
]}

Cho, Y. J. ^{[2
]}

Cho, H. M. ^{[2
]}

机构：

[1] Korea Univ, Dept Adv Mat Chem, Jochiwon 339700, South Korea

[2] Korea Res Inst Stand & Sci, Nanobio Fus Res Ctr, Daejeon 305340, South Korea

来源：

EUROCVD 17 / CVD 17 | 2009年 / 25卷 / 08期

关键词：

CHEMICAL-VAPOR-DEPOSITION; OXIDE THIN-FILMS; GALLIUM OXIDE; BETA-GA2O3; EPITAXY; GROWTH;

D O I：

10.1149/1.3207644

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Dimethylgallium isopropoxide, (Me2GaOPr)-Pr-i, is a gallium analogue of the volatile aluminum source dimethylaluminum isopropoxide, (Me2AlOPr)-Pr-i, which was recently commercialized as a precursor for Al2O3. It is a liquid at room temperature and has a reasonably high vapor pressure, high enough for atomic layer deposition and/or metal organic chemical vapor deposition. We employed this precursor in the atomic layer deposition (ALD) and metalorganic chemical vapor deposition (MOCVD) of Ga2O3 thin films. Our ALD process, in which water was used as the oxygen source, showed an apparent ALD temperature window between 300 and 325 degrees C with a growth rate of similar to 1.5 angstrom/cycle. The MOCVD was performed in the temperature range 450-625 degrees C with oxygen as the reacting gas. The Ga2O3 films deposited in both processes were found to be stoichiometric and amorphous.

引用

页码：587 / 592

页数：6

共 15 条

[1] Chemical vapour deposition and characterization of gallium oxide thin films [J].

Battiston, GA ;

Gerbasi, R ;

Porchia, M ;

Bertoncello, R ;

Caccavale, F .

THIN SOLID FILMS, 1996, 279 (1-2) :115-118

[2] Atomic layer deposition of Al2O3 thin films using dimethylaluminum isopropoxide and water [J].

Cho, W ;

Sung, K ;

An, KS ;

Lee, SS ;

Chung, TM ;

Kim, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (04) :1366-1370

[3]

Fleischer M., 1992, SENSOR ACTUAT B-CHEM, V115, P5

[4] Experimental and Theoretical Analysis of Degradation in Ga2O3-In2O3-ZnO Thin-Film Transistors [J].

Fujii, Mami ;

Uraoka, Yukiharu ;

Fuyuki, Takashi ;

Jung, Ji Sim ;

Kwon, Jang Yeon .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)

[5] Photocatalytic performance of α-, β-, and γ-Ga2O3 for the destruction of volatile aromatic pollutants in air [J].

Hou, Yidong ;

Wu, Ling ;

Wang, Xinchen ;

Ding, Zhengxin ;

Li, Zhaohui ;

Fu, Xianzhi .

JOURNAL OF CATALYSIS, 2007, 250 (01) :12-18

[6] Chemical vapor deposition of zinc gallate using a novel single precursor [J].

Kim, CG ;

Koh, W ;

Ku, SJ ;

Nah, EJ ;

Yu, KS ;

Kim, Y .

JOURNAL DE PHYSIQUE IV, 1999, 9 (P8) :853-860

[7]

Kim DH, 2002, B KOR CHEM SOC, V23, P225

[8] Chemical vapor deposition of Al2O3 films using highly volatile single sources [J].

Koh, W ;

Ku, SJ ;

Kim, Y .

THIN SOLID FILMS, 1997, 304 (1-2) :222-224

[9] Gallium oxide as host material for multicolor emitting phosphors [J].

Miyata, T ;

Nakatani, T ;

Minami, T .

JOURNAL OF LUMINESCENCE, 2000, 87-9 (87) :1183-1185

[10]

Moulder J. F., 1995, HDB XRAY PHOTOELECTR, P91

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