Design and performance of SiPM-based readout of PbF2 crystals for high-rate, precision timing applications

被引：26

作者：

Kaspar, J. ^{[1
]}

Fienberg, A. T. ^{[1
]}

Hertzog, D. W. ^{[1
]}

Huehn, M. A. ^{[1
]}

Kammel, P. ^{[1
]}

Khaw, K. S. ^{[1
]}

Peterson, D. A. ^{[1
]}

Smith, M. W. ^{[1
]}

Van Wechel, T. D. ^{[1
]}

Chapelain, A. ^{[2
]}

Gibbons, L. K. ^{[2
]}

Sweigart, D. A. ^{[2
]}

Ferrari, C. ^{[3
,4
]}

Fioretti, A. ^{[3
,4
]}

Gabbanini, C. ^{[3
,4
]}

Venanzoni, G. ^{[3
]}

Iacovacci, M. ^{[5
,6
]}

Mastroianni, S. ^{[5
]}

Giovanetti, K. ^{[7
]}

Gohn, W. ^{[8
]}

Gorringe, T. ^{[8
]}

Pocanic, D. ^{[9
]}

机构：

[1] Univ Washington, Dept Phys, Box 351560, Seattle, WA 98195 USA

[2] Cornell Univ, Dept Phys, 511 Clark Hall, Ithaca, NY 14853 USA

[3] Ist Nazl Fis Nucl, Lab Nazl Frascati, Via E Fermi 40, I-00044 Frascati, Italy

[4] UOS Pisa, CNR, Ist Nazl Ottica, Via Moruzzi 1, I-56124 Pisa, Italy

[5] Ist Nazl Fis Nucl, Sez Napoli, Ed 6,Via Cintia, I-80126 Naples, Italy

[6] Univ Naples Federico II, Corso Umberto 1 40, I-80138 Naples, Italy

[7] James Madison Univ, Dept Phys & Astron, 901 Carrier Dr, Harrisonburg, VA 22807 USA

[8] Univ Kentucky, Dept Phys & Astron, 505 Rose St, Lexington, KY 40506 USA

[9] Univ Virginia, Dept Phys, 382 McCormick Rd, Charlottesville, VA 22904 USA

来源：

JOURNAL OF INSTRUMENTATION | 2017年 / 12卷

基金：

美国国家科学基金会;

关键词：

Front-end electronics for detector readout; Photon detectors for UV; visible and IR photons (solid-state); Calorimeters; Timing detectors;

D O I：

10.1088/1748-0221/12/01/P01009

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have developed a custom amplifier board coupled to a large-format 16-channel Hamamatsu silicon photomultiplier device for use as the light sensor for the electromagnetic calorimeters in the Muon g - 2 experiment at Fermilab. The calorimeter absorber is an array of lead-fluoride crystals, which produces short-duration Cherenkov light. The detector sits in the high magnetic field of the muon storage ring. The SiPMs selected, and their accompanying custom electronics, must preserve the short pulse shape, have high quantum efficiency, be non-magnetic, exhibit gain stability under varying rate conditions, and cover a fairly large fraction of the crystal exit surface area. We describe an optimized design that employs the new-generation of thru-silicon via devices. The performance is documented in a series of bench and beam tests.

引用

页数：22

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