Kinetic Monte Carlo Simulation of the Growth of AlN Films by Metal Organic Chemical Vapor Deposition

被引：6

作者：

An, Jiadai ^{[1
,2
]}

Dai, Xianying ^{[1
,2
]}

Wu, Wujian ^{[1
,2
]}

Guo, Runqiu ^{[3
]}

Feng, Lansheng ^{[3
]}

机构：

[1] Xidian Univ, Sch Microelect, Xian 710071, Shaanxi, Peoples R China

[2] Xidian Univ, State Key Discipline Lab Wide Bandgap Semicond Te, Xian 710071, Shaanxi, Peoples R China

[3] Xidian Univ, Sch Mechanoelect Engn, Xian 710071, Shaanxi, Peoples R China

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2019年 / 256卷 / 12期

基金：

国家重点研发计划;

关键词：

AlN growth; first-principles calculations; Grove model; kinetic Monte Carlo simulation; metal organic chemical vapor deposition; EPITAXIAL-GROWTH; GAS; TRIMETHYLALUMINUM; AMMONIA; DENSITY; SURFACE; MOCVD;

D O I：

10.1002/pssb.201900114

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Based on first-principle calculation and Grove's model of chemical vapor deposition, a kinetic Monte Carlo (KMC) simulation of AlN film growth by metal organic chemical vapor deposition (MOCVD) is studied. The previous KMC simulation of group III nitrides just involved surface reactions, whereas the simulation herein takes consideration of the gas-phase reactions. First, the activation energy of chemical reactions during AlN film growth by MOCVD is calculated to establish the model. Then, the reaction rate parameters of gas-phase and surface reactions are modified based on Grove's model. Furthermore, the effects of temperature and pressure on growth rate and surface roughness are investigated by KMC simulation. The simulation results demonstrate that approximate to 1100 degrees C with lower pressure is an appropriate growth condition for AlN films by MOCVD. The theoretical calculations provide an important insight into the optimization of AlN films in growth rate and surface roughness at the microscopic level during the growth process in the experiment.

引用

页数：8

共 31 条

[1]

[Anonymous], 2000, BLUE LASER DIODE COM

[2] Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-Blue® MOCVD platform [J].

Bao, Qilong ;

Zhu, Tiankai ;

Zhou, Ning ;

Guo, Shiping ;

Luo, Jun ;

Zhao, Chao .

JOURNAL OF CRYSTAL GROWTH, 2015, 419 :52-56

[3] A combined three-dimensional kinetic Monte Carlo and quantum chemistry study of the CVD of Si on Si(100) surfaces [J].

Cavallotti, C ;

Barbato, A ;

Veneroni, A .

JOURNAL OF CRYSTAL GROWTH, 2004, 266 (1-3) :371-380

[4] AIN films deposited under various nitrogen concentrations by RF reactive sputtering [J].

Cheng, H ;

Sun, Y ;

Zhang, JX ;

Zhang, YB ;

Yuan, S ;

Hing, P .

JOURNAL OF CRYSTAL GROWTH, 2003, 254 (1-2) :46-54

[5] A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materials [J].

Dai Xian-Ying ;

Jin Guo-Qiang ;

Dong Jie-Qiong ;

Wang Chuan-Bao ;

Zhao Xian ;

Chu Ya-Ping ;

Xi Peng-Cheng ;

Deng Wen-Hong ;

Zhang He-Ming ;

Hao Yue .

ACTA PHYSICA SINICA, 2011, 60 (06)

[6]

Deng X. P., 2004, ACTA PHYS SINICA, V53, P2687

[7]

Dobkin D. M., 2003, PRINCIPLES CHEM VAPO

[8] Brownian dynamics study of particles in chemical vapor deposition of aluminum nitride [J].

Endres, Derek ;

Mazumder, Sandip .

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2012, 55 (9-10) :2714-2718

[9] Kinetic Monte Carlo study of metal organic chemical vapor deposition growth dynamics of GaN thin film at microscopic level [J].

Fu, K. ;

Fu, Y. ;

Han, P. ;

Zhang, Y. ;

Zhang, R. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (10)

[10] Quantum chemical study of gas-phase reactions of trimethylaluminium and triethylaluminium with ammonia in III-V nitride semiconductor crystal growth [J].

Ikenaga, M ;

Nakamura, K ;

Tachibana, A ;

Matsumoto, K .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) :936-941

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