Catalyst-free synthesis of a three-dimensional nanoworm-like gallium oxide-graphene nanosheet hybrid structure with enhanced optical properties

被引:62
作者
Kumar, Rajesh [1 ]
Dubey, Pawan Kumar [2 ]
Singh, Rajesh Kumar [3 ]
Vaz, Alfredo R. [1 ]
Moshkalev, Stanislav A. [1 ]
机构
[1] State Univ Campinas UNICAMP, Ctr Semicond Components, BR-1308870 Campinas, SP, Brazil
[2] Univ Allahabad, Nanotechnol Applicat Ctr, Allahabad 211002, Uttar Pradesh, India
[3] Banaras Hindu Univ, Dept Phys, Indian Inst Technol, Varanasi 221005, Uttar Pradesh, India
来源
RSC ADVANCES | 2016年 / 6卷 / 21期
基金
巴西圣保罗研究基金会;
关键词
CHEMICAL-VAPOR-DEPOSITION; BETA-GA2O3; NANOWIRES; GA2O3; PHOTOCATALYTIC PERFORMANCE; PHASE JUNCTION; GAS SENSORS; THIN-FILMS; GROWTH; PHOTOLUMINESCENCE; NANOSTRUCTURES;
D O I
10.1039/c5ra24577j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We here report the synthesis and growth of catalyst-free three-dimensional beta-gallium oxide nanoworm-like nanostructures on graphene nanosheets (3D beta-Ga2O3@GNSs) using a solid mixture of graphite oxide and gallium acetylacetonate by the microwave (MW)-assisted method for the first time. The MW-assisted synthesis of the 3D beta-Ga2O3@GNSs hybrids contains 1D semiconducting beta-Ga2O3 nanoworms (NWs) and 2D highly conducting graphene nanosheets (GNSs) materials. The beta-Ga2O3 NWs have an average diameter of 200 nm and lengths of up to similar to 1 mu m grown on the GNSs. These 3D beta-Ga2O3@GNSs hybrids have been synthesized in a very short time with scalable amounts. The controlling parameters such as MW irradiation time and power were found to greatly influence the structural morphology of the assynthesized 3D beta-Ga2O3@GNSs hybrid. This method for the synthesis of 3D beta-Ga2O3@GNSs hybrids is imperative due to it allowing excellent control over experimental parameters, being low cost and having better reproducibility. Also, the catalyst-free MW-assisted method is a much more rapid and thus higher throughput alternative for effective and scalable growth over the conventional heating method. The crystallinity, structure, morphology, and optical analysis of the 3D beta-Ga2O3@GNSs hybrids are carried out utilizing several techniques. The formation of the 3D beta-Ga2O3@GNSs hybrids shows a band gap variation from 4.94 to 4.48 eV associated with the structural evolution. A suitable growth mechanism has been suggested for the formation of these 3D beta-Ga2O3@GNSs hybrids.
引用
收藏
页码:17669 / 17677
页数:9
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共 71 条
  • [1] Epitaxial GaN Microdisk Lasers Grown on Graphene Microdots
    Baek, Hyeonjun
    Lee, Chul-Ho
    Chung, Kunook
    Yi, Gyu-Chul
    [J]. NANO LETTERS, 2013, 13 (06) : 2782 - 2785
  • [2] Superior thermal conductivity of single-layer graphene
    Balandin, Alexander A.
    Ghosh, Suchismita
    Bao, Wenzhong
    Calizo, Irene
    Teweldebrhan, Desalegne
    Miao, Feng
    Lau, Chun Ning
    [J]. NANO LETTERS, 2008, 8 (03) : 902 - 907
  • [3] Self-organization of electron acceptor molecules on graphene
    Barja, Sara
    Garnica, Manuela
    Jose Hinarejos, Juan
    Vazquez de Parga, Amadeo L.
    Martin, Nazario
    Miranda, Rodolfo
    [J]. CHEMICAL COMMUNICATIONS, 2010, 46 (43) : 8198 - 8200
  • [4] Origin of the blue luminescence of β-Ga2O3
    Binet, L
    Gourier, D
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1998, 59 (08) : 1241 - 1249
  • [5] Ultrahigh electron mobility in suspended graphene
    Bolotin, K. I.
    Sikes, K. J.
    Jiang, Z.
    Klima, M.
    Fudenberg, G.
    Hone, J.
    Kim, P.
    Stormer, H. L.
    [J]. SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) : 351 - 355
  • [6] Structure dependent electronic and magnetic properties of graphitic GaN-ZnO nanoribbons
    Chai, Guo-Liang
    Lin, Chen-Sheng
    Cheng, Wen-Dan
    [J]. JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (16) : 7708 - 7711
  • [7] Graphitic GaN-ZnO and corresponding nanotubes
    Chai, Guo-Liang
    Lin, Chen-Sheng
    Cheng, Wen-Dan
    [J]. JOURNAL OF MATERIALS CHEMISTRY, 2011, 21 (43) : 17071 - 17076
  • [8] Catalytic growth and characterization of Ga2O3 nanowires
    Chang, KW
    Wu, JJ
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2003, 76 (04): : 629 - 631
  • [9] Intrinsic and extrinsic performance limits of graphene devices on SiO2
    Chen, Jian-Hao
    Jang, Chaun
    Xiao, Shudong
    Ishigami, Masa
    Fuhrer, Michael S.
    [J]. NATURE NANOTECHNOLOGY, 2008, 3 (04) : 206 - 209
  • [10] Direct Observation of Au/Ga2O3 Peapodded Nanowires and Their Plasmonic Behaviors
    Chen, Po-Han
    Hsieh, Chin-Hua
    Chen, Sheng-Yu
    Wu, Chen-Hwa
    Wu, Yi-Jen
    Chou, Li-Jen
    Chen, Lih-Juann
    [J]. NANO LETTERS, 2010, 10 (09) : 3267 - 3271