Atom-By-Atom Quantum State Control in Adatom Chains on a Semiconductor

被引：41

作者：

Foelsch, Stefan ^{[1
]}

Yang, Jianshu ^{[1
]}

Nacci, Christophe ^{[1
]}

Kanisawa, Kiyoshi ^{[2
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 09期

关键词：

SCANNING TUNNELING MICROSCOPE; RECONSTRUCTION; SPECTROSCOPY; MANIPULATION; ELECTRONS;

D O I：

10.1103/PhysRevLett.103.096104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The vertical manipulation of native adatoms on a III-V semiconductor surface was achieved in a scanning tunneling microscope at 5 K. Reversible repositioning of individual In atoms on InAs(111)A allows us to construct one-atom-wide In chains. Tunneling spectroscopy reveals that these chains host quantum states deriving from an adatom-induced electronic state and substantial substrate-mediated coupling. Our results show that the combined approach of atom manipulation and local spectroscopy is capable to explore atomic-scale quantum structures on semiconductor platform.

引用

页数：4

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