Simulation of the gate burnout of GaAs MESFET

被引：2

作者：

Vashchenko, VA ^{[1
]}

Martynov, JB ^{[1
]}

Sinkevitch, VF ^{[1
]}

Tager, AS ^{[1
]}

机构：

[1] SR&PC ISTOK,FRYAZINO,RUSSIA

来源：

MICROELECTRONICS AND RELIABILITY | 1996年 / 36卷 / 11-12期

关键词：

D O I：

10.1016/0026-2714(96)00221-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The burnout (irreversible breakdown) mechanism of GaAs MESFET at the gate avalanche breakdown has been studied using two-dimensional (2-D) numerical simulation and pulsed measurements. It is shown, that at some critical level of gate avalanche current the current instability results in formation of the negative differential conductivity region on the gate-source I-V characteristic, spatial instability of the avalanche current and formation of high density current filament. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：1887 / 1890

页数：4

共 6 条

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[4]

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (04) :513-518

[6]

VASHCHENKO VA, 1995, P 25 EUR SOL ST DEV, P135

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