Research of SIR Filter Based on Integrated Passive Device Technology

被引：0

作者：

Zhang, Lei ^{[1
]}

Li, Xiao-zhen ^{[2
]}

Xing, Meng-Jiang ^{[1
]}

Chen, Qi ^{[1
]}

Yang, Xiao-dong ^{[1
]}

机构：

[1] Kunming Univ Sci & Technol, Fac Informat & Automat, Kunming, Yunnan, Peoples R China

[2] Kunming Univ, Dept Informat & Technol, Kunming, Yunnan, Peoples R China

来源：

2017 18TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2017年

基金：

中国国家自然科学基金;

关键词：

IPD; integrated passive device; SIR; Bandpass filters; Step impedance resonator; BANDPASS FILTER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a third order coupled bandpass filter using integrated passive device technology and SIR architecture. The filter is based on the semiconductor wafer IPD process, using thin film technique and photolithography technology, possessing the advantages of high harmonic suppression. Compared with passive device process such as LTCC (low temperature co-fired ceramic), this filter has a smaller size. The designed bandpass filter exhibits low insertion loss less than 1.5 dB, the return loss around 20 dB, center frequency at 5.96GHz, bandpass width at 2.5 GHz. The passband voltage standing wave ratio (VSWR) is under 1.5. Above all, the filter only occupies the area of 1.4 mm x 0.8 mm.

引用

页码：1446 / 1450

页数：5

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