High-Temperature Operation of 1.26-μm Ridge Waveguide Laser With InGaAs Metamorphic Buffer on GaAs Substrate

被引：12

作者：

Arai, Masakazu ^{[1
]}

Nakashima, Kiichi ^{[1
]}

Fujisawa, Takeshi ^{[1
]}

Tadokoro, Takashi ^{[1
]}

Kobayashi, Wataru ^{[1
]}

Yuda, Masahiro ^{[1
]}

Kondo, Yasuhiro ^{[1
]}

机构：

[1] NTT Corp, Photon Labs, NTT, Atsugi, Kanagawa 2430198, Japan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2009年 / 15卷 / 03期

关键词：

InGaAs; laser; metamorphic; uncooled; QUANTUM-WELL LASERS; TERNARY SUBSTRATE; LAYERS; MOVPE;

D O I：

10.1109/JSTQE.2008.2011564

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we have newly developed an InGaAs metamorphic buffer on a GaAs substrate grown by metal-organic vapor-phase epitaxy, and realized a fully relaxed quasi-InGaAs substrate with low threading dislocation density. We have also successfully developed a 1.3-mu m-range ridge waveguide laser with InGaP upper cladding and InAlGaAs lower cladding layers. This laser has achieved the highest continuous-wave operating temperature (173 degrees C) reported for a metamorphic laser. We measured the relaxation oscillation frequency from the relative intensity noise and undertook a 10-Gb/s direct modulation experiment.

引用

页码：724 / 730

页数：7