Room-temperature operation of InTlSb infrared photodetectors on GaAs

被引：20

作者：

Kim, JD ^{[1
]}

Michel, E ^{[1
]}

Park, S ^{[1
]}

Xu, J ^{[1
]}

Javadpour, S ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,DEPT EECS,CTR QUANTUM DEVICES,EVANSTON,IL 60201

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 03期

关键词：

D O I：

10.1063/1.118054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Long-wavelength InTlSb photodetectors operating at room temperature are reported. The photodetectors were grown on (100) semi-insulating GaAs substrate by low-pressure metalorganic chemical vapor deposition. Photoresponse of InTlSb photodetectors is observed up to 11 mu m at room temperature. The maximum responsivity of an In0.96Tl0.04Sb photodetector is about 6.64 V/W at 77 K, corresponding to a detectivity of about 7.64 x 10(8) cm Hz(1/2)NV. The carrier lifetime in InTlSb photodetectors derived from the stationary photoconductivity is 10-50 ns at 77 K. (C) 1996 American Institute of Physics.

引用

页码：343 / 344

页数：2

共 10 条

[1] [Anonymous], 1995, INFRARED PHOTON DETE
[2] PHOTOCONDUCTANCE MEASUREMENTS ON INAS0.22SB0.78/GAAS GROWN USING MOLECULAR-BEAM EPITAXY
BETHEA, CG
LEVINE, BF
YEN, MY
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (04) : 291 - 292
[3] BACKSIDE-ILLUMINATED INASSB-GASB BROAD-BAND DETECTORS
BUBULAC, LO
ANDREWS, AM
GERTNER, ER
CHEUNG, DT
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 734 - 736
[4] P-N-JUNCTION FORMATION IN INSB AND INAS1-XSBX BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
CHIANG, PK
BEDAIR, SM
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 383 - 385
[5] GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
CHOI, YH
BESIKCI, C
SUDHARSANAN, R
RAZEGHI, M
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (03) : 361 - 363
[6] CHOI YH, 1992, P MRS, V281, P375
[7] Kim JD, 1996, APPL PHYS LETT, V68, P99, DOI 10.1063/1.116784
[8] PHOTOCONDUCTANCE MEASUREMENTS ON INTISB/INSB/GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
STAVETEIG, PT
CHOI, YH
LABEYRIE, G
BIGAN, E
RAZEGHI, M
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (04) : 460 - 462
[9] SZE SM, 1981, PHYSICS SEMICONDUCTO
[10] INTLSB - AN INFRARED DETECTOR MATERIAL
VANSCHILFGAARDE, M
SHER, A
CHEN, AB
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (16) : 1857 - 1859

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