Homogeneous Nucleation of Epitaxial CoSi2 and NiSi in Si Nanowires

被引:61
作者
Chou, Yi-Chia [1 ]
Wu, Wen-Wei [2 ]
Chen, Lih-Juann [3 ]
Tu, King-Ning [1 ]
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
关键词
EVENTS; GROWTH;
D O I
10.1021/nl900779j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Homogeneous nucleation is rare except in theory. We observed repeating events of homogeneous nucleation in epitaxial growth of CoSi2 and NiSi silicides in nanowires of silicon by using high resolution TEM. The growth of every single atomic layer requires nucleation. Heterogeneous nucleation is prevented because of non-microreversibility between the oxide/Si and oxide/silicide interfaces. We determined the incubation time of homogeneous nucleation. The calculated and the measured nucleation rates are in good agreement. We used Zeldovich factor to estimate the number of molecules in the critical nucleus; it is about 10 and reasonable. A very high supersaturation is found for the homogeneous nucleation.
引用
收藏
页码:2337 / 2342
页数:6
相关论文
共 17 条
  • [1] Balluffi R.W., 2005, KINETIC PROCESSES MA
  • [2] In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano COSi2 in nanowires of Si
    Chou, Yi-Chia
    Wu, Wen-Wei
    Cheng, Shao-Liang
    Yoo, Bong-Young
    Myung, Nosang
    Chen, Lih J.
    Tu, K. N.
    [J]. NANO LETTERS, 2008, 8 (08) : 2194 - 2199
  • [3] Christian J.W., 1965, THEORY TRANSFORMATIO, V1st
  • [4] ACTIVATION-ENERGY FOR COSI AND COSI2 FORMATION MEASURED DURING RAPID THERMAL ANNEALING
    COLGAN, EG
    CABRAL, C
    KOTECKI, DE
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) : 614 - 619
  • [5] Logic gates and computation from assembled nanowire building blocks
    Huang, Y
    Duan, XF
    Cui, Y
    Lauhon, LJ
    Kim, KH
    Lieber, CM
    [J]. SCIENCE, 2001, 294 (5545) : 1313 - 1317
  • [6] TRANSIENT NUCLEATION IN CONDENSED SYSTEMS
    KELTON, KF
    GREER, AL
    THOMPSON, CV
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1983, 79 (12) : 6261 - 6276
  • [7] Kinetics of Individual Nucleation Events Observed in Nanoscale Vapor-Liquid-Solid Growth
    Kim, B. J.
    Tersoff, J.
    Kodambaka, S.
    Reuter, M. C.
    Stach, E. A.
    Ross, F. M.
    [J]. SCIENCE, 2008, 322 (5904) : 1070 - 1073
  • [8] In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction
    Lu, Kuo-Chang
    Wu, Wen-Wei
    Wu, Han-Wei
    Tanner, Carey M.
    Chang, Jane P.
    Chen, Lih J.
    Tu, K. N.
    [J]. NANO LETTERS, 2007, 7 (08) : 2389 - 2394
  • [9] Nanowire-based nanoelectronic devices in the life sciences
    Patolsky, Fernando
    Timko, Brian P.
    Zheng, Gengfeng
    Lieber, Charles M.
    [J]. MRS BULLETIN, 2007, 32 (02) : 142 - 149
  • [10] Undercooling and solidification of atomized liquid droplets
    Perepezko, JH
    Sebright, JL
    Höckel, PG
    Wilde, G
    [J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2002, 326 (01): : 144 - 153