A low-power, X-band SiGe HBT low-noise amplifier for near-space radar applications

被引：20
作者：
Kuo, Wei-Min Lance [1 ]
Krithivasan, Ramkumar
Li, Xiangtao
Lu, Yuan
Cressler, John D.
Gustat, Hans
Heinemann, Bernd
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[2] IHP Microelect, D-15236 Frankfurt, Oder, Germany
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2006年 / 16卷 / 09期
关键词：
heterojunction bipolar transistor (HBT); low-noise amplifier (LNA); low-power; noise figure (NF); radar; silicon-germanium (SiGe); X-band;
D O I：
10.1109/LMWC.2006.880696
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-power, X-band low-noise amplifier (LNA) is presented. Implemented with 180 GHz silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs), the circuit occupies 780 x 660 mu m(2). The LNA exhibits a gain of 11.0 dB at 9.5 GHz, a mean noise figure of 2.78 dB across X-band, and an input third-order intercept point of -9.1 dBm near 9.5 GHz, while dissipating only 2.5 mW. The low-power performance of this LNA, together with its natural total-dose radiation immunity, demonstrates the potential of SiGe HBT technology for near-space radar applications.
引用
收藏
页码：520 / 522
页数：3
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