Gallium-assisted deoxidation of patterned substrates for site-controlled growth of InAs quantum dots

被引：15

作者：

Atkinson, P. ^{[1
]}

Schmidt, O. G. ^{[2
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期

关键词：

Atomic force microscopy; Surface processes; Molecular beam epitaxy; Semiconducting III-V materials; OXIDE DESORPTION; ATOMIC-HYDROGEN; GAAS(001);

D O I：

10.1016/j.jcrysgro.2008.09.024

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In-situ gallium-assisted deoxidation of ex-situ patterned GaAs (10 0) substrates has been investigated, and compared with the more conventionally used hydrogen-assisted deoxidation. A total of 6-8 ML of gallium supplied at a substrate temperature of 420-460 degrees C has been shown to remove the surface oxide without significantly damaging shallow electron-beam patterned holes. These holes, similar to 20 nm deep and similar to 100 nm wide, have then been successfully used to control the nucleation site of single InAs quantum dots. (C) 2008 Elsevier B.V. All rights reserved

引用

页码：1815 / 1818

页数：4

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