Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers

被引：18

作者：

Okamoto, Koichiro ^{[1
]}

Inoue, Shigeru ^{[2
]}

Nakano, Takayuki ^{[2
]}

Ohta, Jitsuo ^{[1
,2
]}

Fujioka, Hiroshi ^{[1
,2
,3
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] KAST, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

[3] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 05期

关键词：

Structural properties; Epitaxy; Gallium nitride; Hafnium nitride; Molybdenum; ALN FILMS; STRUCTURAL-PROPERTIES; ORIENTATION; REFLECTION; JUNCTIONS; ELECTRODE; SURFACES; ENERGY;

D O I：

10.1016/j.jcrysgro.2008.11.097

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN films have been grown on single-crystalline Mo substrates using lattice-matched HfN buffer layers, and their structural properties have been investigated. Although it is not possible to grow high-quality GaN films on either Mo(110) or (111) substrates, high-quality epitaxial GaN(0001) films with atomically flat surfaces can be grown on the HfN(111)/Mo(110) structure with an in-plane alignment of GaN[11 (2) over bar0] parallel to HfN[1 (1) over bar0] parallel to Mo[001]. We have also found that the HfN/Mo heterointerface is quite abrupt. These results indicate that Mo(110) substrates with HfN buffer layers are promising candidates for the fabrication of future light-emitting devices (LEDs). (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1311 / 1315

页数：5

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