Low-temperature plasma enhanced chemical vapour deposition of carbon nanotubes

被引：78

作者：

Hofmann, S ^{[1
]}

Kleinsorge, B ^{[1
]}

Ducati, C ^{[1
]}

Ferrari, AC ^{[1
]}

Robertson, J ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

关键词：

carbon nanotubes; plasma CVD; catalytic processes; nanotechnology;

D O I：

10.1016/j.diamond.2003.11.046

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vertically aligned carbon nanotubes were selectively grown at temperatures as low as 120 degreesC by plasma enhanced chemical vapour deposition. We investigated the effects of acetylene, ethylene and methane as carbon source gases together with ammonia as an etchant and nickel as catalyst material. The diluted acetylene plasma gave the highest nanotube growth rate and showed the most intense C. Swan bands in optical emission. The activation energy for the growth rate was found to be 0.23 eV, much less than for thermal chemical vapour deposition (1.2-1.5 eV). This suggests growth occurs by surface diffusion of carbon on nickel. The result allows more cost-effective nanotube production, direct growth of nanotubes onto low-temperature substrates like plastics, and could facilitate carbon nanotube integration into sensitive nanoelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：1171 / 1176

页数：6

共 20 条

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