Study on the Cu-doped Ge2Sb2Te5 for low-power phase change memory

被引：48

作者：

Ding, Keyuan ^{[1
,2
]}

Ren, Kun ^{[1
,2
]}

Rao, Feng ^{[1
]}

Song, Zhitang ^{[1
]}

Wu, Liangcai ^{[1
]}

Liu, Bo ^{[1
]}

Feng, Songlin ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100080, Peoples R China

来源：

MATERIALS LETTERS | 2014年 / 125卷

基金：

中国国家自然科学基金;

关键词：

Semiconductors; Nanocomposites; Low power phase change memory; Cu doped Ge2Sb2Te5; TRANSITION;

D O I：

10.1016/j.matlet.2014.03.180

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu-0.10(Ge2Sb2Te5)(0.90) is proposed for low power consumption phase change memory (PCM). The thermal stability of Ge2Sb2Te5 is increased by 10 at% Cu doping, with the crystallization temperature and data retention increased from 163 degrees C to 202 degrees C and from 87 degrees C to 134 degrees C, respectively. The electric operation results have proved the low power consumption and good cycling ability (> 104), which may result from the low melting point (486 degrees C) and the negligible phase separation in Cu-0.10(Ge2Sb2Te5)(0.90). The good thermal stability, low T-m and good cycling phase change ability have made Cu-0.10(Ge2Sb2Te5)(0.50) a promising candidate for the low power consumption PCM application. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：143 / 146

页数：4

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