Electronic Structure of Ferromagnetic Semiconductor Ga1-xMnxAs Probed by Subgap Magneto-optical Spectroscopy

被引:31
作者
Acbas, G. [1 ]
Kim, M. -H. [1 ]
Cukr, M. [2 ]
Novak, V. [2 ]
Scarpulla, M. A. [3 ,4 ]
Dubon, O. D. [3 ,4 ]
Jungwirth, T. [2 ,5 ]
Sinova, Jairo [2 ,6 ]
Cerne, J. [1 ]
机构
[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
[2] Acad Sci Czech Republic, Inst Phys, Vvi, Prague 16253 6, Czech Republic
[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
[5] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[6] Texas A&M Univ, Dept Phys, College Stn, TX 77843 USA
关键词
DILUTED MAGNETIC SEMICONDUCTORS; CARRIER-INDUCED FERROMAGNETISM; GA1-XMN(X)AS; TEMPERATURE; ZINCBLENDE;
D O I
10.1103/PhysRevLett.103.137201
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We employ Faraday and Kerr effect spectroscopy in the infrared range to investigate the electronic structure of Ga1-xMnxAs near the Fermi energy. The band structure of this archetypical dilute-moment ferromagnetic semiconductor has been a matter of controversy, fueled partly by previous measurements of the unpolarized infrared absorption and their phenomenological impurity-band interpretation. Unlike the unpolarized absorption, the infrared magneto-optical effects we study are intimately related to ferromagnetism, and their interpretation is much more microscopically constrained in terms of the orbital character of the relevant band states. We show that the conventional theory of the disordered valence band with an antiferromatnetic exchange term accounts semiquantitatively for the overall characteristics of the measured infrared magneto-optical spectra.
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页数:4
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