Pressure-dependence of superconducting behavior in CeRh2Si2

被引：12

作者：

Kobayashi, TC

Muramatsu, T ^{[1
]}

Takimoto, M

Hanazono, K

Shimizu, K

Amaya, K

Araki, S

Settai, R

Onuki, Y

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

[2] Osaka Univ, Res Ctr Mat Sci Extreme Condit, Toyonaka, Osaka 5608531, Japan

[3] Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2000年 / 281卷

关键词：

CeRh2Si2; electrical resistance; high pressure; superconductivity;

D O I：

10.1016/S0921-4526(99)00930-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electrical resistance has been investigated in a high-quality polycrystal of CeRh2Si2 under high pressures of up to 5.4 GPa. We found a resistance drop corresponding to superconductivity in the pressure range from 0.7 to 2.9 GPa. The relative decrease of the resistance shows a maximum in the vicinity of a critical pressure Pc. An onset temperature of superconductivity is about 0.6 K. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：7 / 8

页数：2

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