Freestanding Ag2S/CuS PVA films with improved dielectric properties for organic electronics

被引:10
作者
Aippunny, Ann Mary K. [1 ,2 ]
Shamsudeen, Sajna M. [1 ]
Valparambil, Prakashan [1 ]
Mathew, Siby [3 ]
Vishwambharan, Unnikrishnan N. [1 ]
机构
[1] Mahatma Gandhi Univ, Sch Pure & Appl Phys, Kottayam 686560, Kerala, India
[2] St Thomas Coll Autonomous, Dept Phys, Trichur 680001, Kerala, India
[3] SH Coll Autonomous, Dept Phys, Thevara 682013, Kerala, India
关键词
composites; dielectric properties; nanostructured polymers; synthesis and processing; POLYMER COMPOSITES; SILICA; NANOPARTICLES; ENCAPSULATION; PERMITTIVITY; ABSORPTION;
D O I
10.1002/app.43568
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
The prime goal of this work is to synthesize free-standing polyvinyl alcohol (PVA) films doped with Ag2S, CuS, Ag2S/CuS alloy, and Ag2S/CuS nanocomposites through the sol-gel route. The dependence of Ag2S content in the PVA nanocomposite films on both the real and imaginary parts of the complex permittivity and loss tangent values was examined. An enhanced dielectric constant was achieved with minimum dielectric loss due to the insulating silica layer. By changing the Ag2S content in Ag2S/CuS PVA films, the AC conductivity is improved with pure Ag2S nanoparticles exhibiting highest values of the order of 10(-6)-10(-9)S/cm. The Cole-Cole parameters were calculated and the semicircles observed in the plots indicate a single relaxation process. The results suggest that these composite films are potential materials for embedded capacitor applications. (c) 2016 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2016, 133, 43568.
引用
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页数:7
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