Investigation of the evolution of nitrogen defects in flash-lamp-annealed InGaZnO films and their effects on transistor characteristics

被引：11

作者：

Eom, Tae-Yil ^{[1
]}

Ahn, Chee-Hong ^{[2
]}

Kang, Jun-Gu ^{[2
]}

Salman, Muhammad Saad ^{[2
]}

Lee, Sun-Young ^{[2
]}

Kim, Yong-Hoon ^{[1
,2
]}

Lee, Hoo-Jeong ^{[1
,2
]}

Kang, Chan-Mo ^{[3
]}

Kang, Chiwon ^{[2
]}

机构：

[1] Sungkyunkwan Univ, SKKU Adv Inst Nano Technol, Suwon 16419, South Korea

[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea

[3] Elect & Telecommun Res Inst, IoT Convergence Res Dept, Daejeon 34129, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 06期

关键词：

LOW-TEMPERATURE; SOL-GEL; FABRICATION; MOBILITY; ARRAYS; LIGHT; IRRADIATION; ZNO;

D O I：

10.7567/APEX.11.061104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we show the evolution of nitrogen defects during a sol-gel reaction in flash-lamp-annealed InGaZnO (IGZO) films and their effects on the device characteristics of their thin-film transistors (TFTs). The flash lamp annealing (FLA) of the IGZO TFT for 16s helps achieve a mobility of approximately 7cm(2) V-1 s(-1). However, further extension of the annealing time results only in drastic increases in carrier concentration and off-current. The X-ray photoelectron spectroscopy (XPS) analysis of the N 1s peak unravels the presence of oxygen-vacancy-associated nitrogen defects and their evolution with annealing time, which is possibly responsible for the increase in carrier concentration. (C) 2013 The Japan Society of Applied Physics.

引用

页数：4

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