A physics-based analytic solution to the MOSFET surface potential from accumulation to strong-inversion region

被引：45
作者：
He, Jin [1 ]
Chan, Mansun
Zhang, Xing
Wang, Yangyuan
机构：
[1] Peking Univ, Sch Elect Engn & Comp Sci, Inst Microelect, Nanoscale Device & Circuit Grp, Beijing 100871, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 09期
关键词：
analytic solution; compact modeling; MOSFETs; surface potential;
D O I：
10.1109/TED.2006.880364
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A physics-based analytic solution to the surface potential from the accumulation to the strong-inversion region has been derived from the complete MOSFET surface potential equation in this paper without any need for smooth functions or simplification by dropping some second-order related terms. Its high accuracy in predicting the surface potential and the transcapacitance under various bias conditions has also been verified by a comparison with the numerical results. The explicit surface potential solution not only leads to a more clear understanding of MOSFET device physics but also provides a better platform to develop the advanced surface potential-based model for the circuit simulation.
引用
收藏
页码：2008 / 2016
页数：9
相关论文
共 20 条
[1]   Exact analytical solution for current flow through diode with series resistance [J].
Banwell, TC ;
Jayakumar, A .
ELECTRONICS LETTERS, 2000, 36 (04) :291-292
[2]   Bipolar transistor circuit analysis using the Lambert W-function [J].
Banwell, TC .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS, 2000, 47 (11) :1621-1633
[3]   MISNAN - A PHYSICALLY BASED CONTINUOUS MOSFET MODEL FOR CAD APPLICATIONS [J].
BOOTHROYD, AR ;
TARASEWICZ, SW ;
SLABY, C .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1991, 10 (12) :1512-1529
[4]   CHARGE-SHEET MODEL OF MOSFET [J].
BREWS, JR .
SOLID-STATE ELECTRONICS, 1978, 21 (02) :345-355
[5]   Analytical approximation for the MOSFET surface potential [J].
Chen, TL ;
Gildenblat, G .
SOLID-STATE ELECTRONICS, 2001, 45 (02) :335-339
[6]   On the Lambert W function [J].
Corless, RM ;
Gonnet, GH ;
Hare, DEG ;
Jeffrey, DJ ;
Knuth, DE .
ADVANCES IN COMPUTATIONAL MATHEMATICS, 1996, 5 (04) :329-359
[7]   SP: An advanced surface-potential-based compact MOSFET model (invited) [J].
Gildenblat, G ;
Chen, TL ;
Gu, X ;
Wang, H ;
Cai, X .
PROCEEDINGS OF THE IEEE 2003 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2003, :233-240
[8]   Benchmark tests on surface potential based charge-sheet models [J].
He, J ;
Zhang, X ;
Zhang, GG ;
Wang, YY .
SOLID-STATE ELECTRONICS, 2006, 50 (02) :263-267
[9]   Comments on "Modeling MOSFET surface capacitance behavior under non-equilibrium" [J].
He, J ;
Zhang, X ;
Wang, YY .
SOLID-STATE ELECTRONICS, 2006, 50 (02) :259-262
[10]  
HE J, 2006, P NANOTECH WCM BOST, V3, P616
12