Modeling of general non-uniform on-chip interconnect structures

被引:0
|
作者
Sundberg, G [1 ]
Lutz, RD [1 ]
Hahm, YC [1 ]
Settaluri, RK [1 ]
Zheng, J [1 ]
Weisshaar, A [1 ]
Tripathi, VK [1 ]
机构
[1] Oregon State Univ, Corvallis, OR 97331 USA
来源
1999 INTERNATIONAL SYMPOSIUM ON MICROELECTRONICS, PROCEEDINGS | 1999年 / 3906卷
关键词
on-chip interconnects; uniform and non-uniform lines; discontinuities; lossy substrate; silicon;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A simple modeling and characterization approach for typical non-uniform on-chip interconnect structures on lossy substrate is presented. The approach as based on the segmentation of the non-uniform interconnect structure into single and coupled uniform interconnect sections with known characteristics and interconnect discontinuities. The bend discontinuity is characterized by full-wave electromagnetic simulation and equivalent circuit parameters are extracted. The segmentation approach is shown to be sufficiently accurate and useful in simplifying the modeling procedure for non-uni;form lossy interconnects. Computational results are presented in frequency and time domain for representative non-uniform interconnect structures on lossy silicon substrate.
引用
收藏
页码:396 / 401
页数:6
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