Not your familiar two dimensional transition metal disulfide: structural and electronic properties of the PdS2 monolayer

被引:154
作者
Wang, Yu [1 ]
Li, Yafei [1 ]
Chen, Zhongfang [2 ]
机构
[1] Nanjing Normal Univ, Jiangsu Key Lab Biofunct Mat, Coll Chem & Mat Sci, Nanjing 210046, Jingsu, Peoples R China
[2] Univ Puerto Rico, Inst Funct Nanomat, Dept Chem, San Juan, PR 00931 USA
基金
美国国家科学基金会;
关键词
BLACK PHOSPHORUS; CARRIER MOBILITY; STRAIN; FIELD; OPTOELECTRONICS; DICHALCOGENIDE; SEMICONDUCTOR; TELLURIDES; NANOSHEETS; SELENIDES;
D O I
10.1039/c5tc01345c
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By means of density functional theory (DFT) computations, we theoretically investigated a novel two-dimensional (2D) transition metal disulfide (TMD), namely the PdS2 monolayer. Distinguished from other 2D TMDs which adopt the ordinary 2H or 1T configuration, the PdS2 monolayer presents rather unique structural properties: each Pd atom binds to four S atoms in the same plane, and two neighboring S atoms can form a covalent S-S bond. The hybrid HSE06 DFT computations demonstrated that the PdS2 monolayer is semiconducting with an indirect band gap of 1.60 eV, which can be effectively reduced by employing a uniaxial or biaxial tensile strain. Especially, PdS2 has rather large hole and electron mobilities. Our results suggest that the PdS2 monolayer is rather promising for future electronics and optoelectronics.
引用
收藏
页码:9603 / 9608
页数:6
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