Optical characterization of full SiC wafer

被引：0
|
作者：
El Harrouni, I
Bluet, JM
Ziane, D
Mermoux, M
Baillet, F
Guillot, G
机构：
[1] Inst Natl Sci Appl, CNRS, UMR 5511, Phys Mat Lab, F-69621 Villeurbanne, France
[2] Ecole Natl Super Electrochim & Electrome Grenoble, Lab Electrochim & Physicochim Mat Interfaces, F-38402 St Martin Dheres, France
[3] Ecole Natl Super Electrochim & Electrome Grenoble, Thermodynam & Physicochim Met Lab, F-38402 St Martin Dheres, France
来源：
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | 2004年 / 457-460卷
关键词：
photoluminescence; Raman spectroscopy; mobility; lifetime; mapping;
D O I：
10.4028/www.scientific.net/MSF.457-460.593
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Different optical characterization tool for mapping of SiC electrical properties (mobility, free carrier concentration, doping, minority carrier effective lifetime) are reviewed. For each technique, advantages and drawbacks are discussed and the domain of use is presented. An original approach to determine the minority carrier lifetime from room temperature PL intensity is more particularly developed.
引用
收藏
页码：593 / 596
页数：4
相关论文
共 50 条
  • [1] Full wafer particle defect characterization
    Brundle, CR
    Uritsky, YS
    CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2000, INTERNATIONAL CONFERENCE, 2001, 550 : 285 - 291
  • [2] Rapid Characterization of SiC Crystals by Full-wafer Photoluminescence Imaging under Below-gap Excitation
    Isono, H.
    Tajima, M.
    Hoshino, N.
    Sugimoto, H.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 545 - 548
  • [3] TWO DEVICES FOR NON-OPTICAL CHARACTERIZATION OF FULL WAFER MAGNETIC BUBBLE FILMS.
    Omaggio, J.P.
    Globe, M.
    Wigen, P.E.
    Mier, M.G.
    Journal of Applied Physics, 1979, 50 (B3): : 2182 - 2184
  • [4] 2 DEVICES FOR NON-OPTICAL CHARACTERIZATION OF FULL WAFER MAGNETIC-BUBBLE FILMS
    OMAGGIO, JP
    GLOBE, M
    WIGEN, PE
    MIER, MG
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 2182 - 2184
  • [5] Full Si wafer conversion into bulk 3C-SiC
    Leycuras, A
    Tottereau, O
    Vicente, P
    Falkovsky, L
    Girard, P
    Camassel, J
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 147 - 150
  • [6] SiC to SiC wafer bonding
    Yushin, GN
    Kvit, AV
    Collazo, R
    Sitar, Z
    SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES, 2003, 742 : 91 - 95
  • [7] Electrical and optical characterization of SiC
    Pensl, G
    Schmid, F
    Ciobanu, F
    Laube, M
    Reshanov, SA
    Schulze, N
    Semmelroth, K
    Nagasawa, H
    Schöner, A
    Wagner, G
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 365 - 370
  • [8] Optical characterization of SiC wafers
    Burton, JC
    Pophristic, M
    Long, FH
    Ferguson, I
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 201 - 206
  • [9] ELECTRICAL AND OPTICAL CHARACTERIZATION OF SIC
    PENSL, G
    CHOYKE, WJ
    PHYSICA B-CONDENSED MATTER, 1993, 185 (1-4) : 264 - 283
  • [10] Thermal characterization of direct wafer bonded Si-on-SiC
    Field, Daniel E.
    Pomeroy, James W.
    Gity, Farzan
    Schmidt, Michael
    Torchia, Pasqualino
    Li, Fan
    Gammon, Peter M.
    Shah, Vishal A.
    Kuball, Martin
    APPLIED PHYSICS LETTERS, 2022, 120 (11)
12345