X-band RF MEMS phase shifters for phased array applications

被引：132

作者：

Malczewski, A ^{[1
]}

Eshelman, S ^{[1
]}

Pillans, B ^{[1
]}

Ehmke, J ^{[1
]}

Goldsmith, CL ^{[1
]}

机构：

[1] Raytheon Syst Co, Dallas, TX 75266 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1999年 / 9卷 / 12期

关键词：

low loss; microelectromechanical systems (MEMS); phase shifters; switches;

D O I：

10.1109/75.819417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, development of a low-loss radio frequency (RF) microelectromechanical (MEMS) 4-bit X-band monolithic phase shifter is presented. These microstrip circuits are fabricated on 0.021-in-thick high-resistivity silicon and are based on a reflection topology using 3-dB Lange couplers. The average insertion loss of the circuit is 1.4 dB with the return loss >11 dB at 8 GHz. To the best of our knowledge, this is a lowest reported loss for X-band phase shifter and promises to greatly reduce the cost of designing and building phase arrays.

引用

页码：517 / 519

页数：3

共 5 条

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Goldsmith, CL ;

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[4]

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