A 23.8-GHz SOICMOS tuned amplifier

被引：33

作者：

Floyd, BA ^{[2
]}

Shi, L

Taur, Y

Lagnado, I

O, KK

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Silicon Microwave Integrated Circuits & Syst Res, Gainesville, FL 32611 USA

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[3] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[4] Space & Naval Warface Syst Ctr, San Diego, CA 92152 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2002年 / 50卷 / 09期

关键词：

CMOS; K-band; low-noise amplifier; negative resistance; silicon-on-insulator; SOI; spiral inductor; tuned amplifier;

D O I：

10.1109/TMTT.2002.802334

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 23.8-GHz tuned amplifier is demonstrated in a partially scaled 0.1-mum silicon-on-insulator CMOS technology. The fully integrated three-stage amplifier employs a common-gate, source-follower, and cascode with on-chip spiral inductors and MOS capacitors. The gain is 7.3 dB, while input and output reflection coefficients are -45 and -9.4 dB, respectively. Positive gain is exhibited beyond 26 GHz. The amplifier draws 53 mA from a 1.5-V supply. The measured on-wafer noise figure is 10 dB, while the input-referred third-order intercept point is -7.8 dBm. The results demonstrate that 0.1-mum CMOS technology may be used for 20-GHz RF applications and suggest even higher operating frequencies and better performance for further scaled technologies.

引用

页码：2193 / 2196

页数：4

共 16 条

[1] A bond-pad structure for reducing effects of substrate resistance on LNA performance in a silicon bipolar technology [J].

Colvin, JT ;

Bhatia, SS ;

O, KK .

PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1998, :109-112

[2] A 15-GHz wireless interconnect implemented in a 0.18-μm CMOS technology using integrated transmitters, receivers, and antennas [J].

Floyd, BA ;

Hung, CM ;

O, KK .

2001 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2001, :155-158

[3] SOI and bulk CMOS frequency dividers operating above 15 GHz [J].

Floyd, BA ;

Shi, L ;

Taur, Y ;

Lagnado, I ;

O, KK .

ELECTRONICS LETTERS, 2001, 37 (10) :617-618

[4] A 900-MHz, 0.8-μm CMOS low noise amplifier with 1.2-dB noise figure [J].

Floyd, BA ;

Mehta, J ;

Gamero, C ;

O, KK .

PROCEEDINGS OF THE IEEE 1999 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 1999, :661-664

[5]

FLOYD BA, 2001, THESIS U FLORIDA GAI

[6]

FOSSUM JG, 1997, SOISPICE 4 VER 4 4 F

[7]

GRAMEGNA G, 2000, ISSCC FEB, P380

[8] DESIGN OF PLANAR RECTANGULAR MICROELECTRONIC INDUCTORS [J].

GREENHOUSE, HM .

IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (02) :101-109

[9] 4- and 13-GHz tuned amplifiers implemented in a 0.1-μm CMOS technology on SOI, SOS, and bulk substrates [J].

Ho, YC ;

Kim, KH ;

Floyd, BA ;

Wann, C ;

Taur, Y ;

Lagnado, I ;

O, KK .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (12) :2066-2073

[10] A 25.9-GHz voltage-controlled oscillator fabricated in a CMOS process. [J].

Hung, CM ;

Shi, L ;

Lagnado, I .

2000 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2000, :100-101

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