Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

被引:10
作者
Lugani, L. [1 ]
Carlin, J-F [1 ]
Py, M. A. [1 ]
Grandjean, N. [1 ]
机构
[1] Ecole Polytech Fed Lausanne, ICMP, CH-1015 Lausanne, Switzerland
基金
瑞士国家科学基金会;
关键词
BRAGG MIRRORS; HEMT DEVICES; GAN; OPTIMIZATION;
D O I
10.1063/1.4895807
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 degrees C and show that they are not fully stable. In particular, InAlN top layers undergo degradation during high temperature annealing due to a surface related process, which causes the loss of crystal quality. This strongly impacts the transport properties of InAlN/GaN HEMT heterostructures; in particular, the mobility is significantly reduced. However, we demonstrate that high thermal stability can be achieved by capping with a GaN layer as thin as 0.5 nm. Those findings enabled us to realize in situ passivated HEMT heterostructures with state of the art transport properties. (c) 2014 AIP Publishing LLC.
引用
收藏
页数:4
相关论文
共 19 条
[1]   Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation [J].
Alexewicz, A. ;
Alomari, M. ;
Maier, D. ;
Behmenburg, H. ;
Giesen, C. ;
Heuken, M. ;
Pogany, D. ;
Kohn, E. ;
Strasser, G. .
SOLID-STATE ELECTRONICS, 2013, 89 :207-211
[2]   In situ SiN passivation of AlInN/GaN heterostructures by MOVPE [J].
Behmenburg, H. ;
Khoshroo, L. Rahimzadeh ;
Mauder, C. ;
Ketteniss, N. ;
Lee, K. H. ;
Eickelkamp, M. ;
Brast, M. ;
Fahle, D. ;
Woitok, J. F. ;
Vescan, A. ;
Kalisch, H. ;
Heuken, M. ;
Jansen, R. H. .
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8)
[3]   Crack-free fully epitaxial nitride microcavity using highly reflective AllnN/GaN Bragg mirrors -: art. no. 031107 [J].
Carlin, JF ;
Dorsaz, J ;
Feltin, E ;
Butté, R ;
Grandjean, N ;
Ilegems, M ;
Laügt, M .
APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3
[4]   High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN [J].
Carlin, JF ;
Ilegems, M .
APPLIED PHYSICS LETTERS, 2003, 83 (04) :668-670
[5]   Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers [J].
Castiglia, A. ;
Feltin, E. ;
Cosendey, G. ;
Altoukhov, A. ;
Carlin, J. -F. ;
Butte, R. ;
Grandjean, N. .
APPLIED PHYSICS LETTERS, 2009, 94 (19)
[6]   Thermal stability of metal organic vapor phase epitaxy grown AlInN [J].
Gadanecz, A. ;
Blaesing, J. ;
Dadgar, A. ;
Hums, C. ;
Krost, A. .
APPLIED PHYSICS LETTERS, 2007, 90 (22)
[7]   In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111) [J].
Germain, M. ;
Cheng, K. ;
Derluyn, J. ;
Degroote, S. ;
Das, J. ;
Lorenz, A. ;
Marcon, D. ;
Van Hove, M. ;
Leys, M. ;
Borghs, G. .
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06) :2010-2012
[8]   High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures [J].
Gonschorek, M. ;
Carlin, J-F. ;
Feltin, E. ;
Py, M. A. ;
Grandjean, N. .
APPLIED PHYSICS LETTERS, 2006, 89 (06)
[9]   Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03≤x≤0.23) [J].
Gonschorek, M. ;
Carlin, J. -F. ;
Feltin, E. ;
Py, M. A. ;
Grandjean, N. ;
Darakchieva, V. ;
Monemar, B. ;
Lorenz, M. ;
Ramm, G. .
JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)
[10]   The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's [J].
Green, BM ;
Chu, KK ;
Chumbes, EM ;
Smart, JA ;
Shealy, JR ;
Eastman, LF .
IEEE ELECTRON DEVICE LETTERS, 2000, 21 (06) :268-270