A simple technique to synthesize pure and highly crystalline boron nitride nanowires

被引：25

作者：

Ahmad, Pervaiz ^{[1
]}

Khandaker, Mayeen Uddin ^{[1
]}

Khan, Ziaul Raza ^{[1
]}

Amin, Yusoff Mohd ^{[1
]}

机构：

[1] Univ Malaya, Fac Sci, Dept Phys, Kuala Lumpur 50603, Malaysia

来源：

CERAMICS INTERNATIONAL | 2014年 / 40卷 / 09期

关键词：

Chemical preparation; Electron microscopy; X-ray methods; Sensors; BNNWs; WALLED CARBON NANOTUBES; RAMAN-SPECTROSCOPY; HYDROGEN STORAGE; CATHODOLUMINESCENCE; PHOTOLUMINESCENCE; BN;

D O I：

10.1016/j.ceramint.2014.06.061

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Unlike various complex and extensive experimental procedures available in the literature, a simple experimental technique has been developed to synthesize boron nitride nanowires (BNNWs) on Si substrates in a short growth duration of 30 min via vapor-liquid-solid (VLS) growth mechanism. The surface morphology and diameter of BNNWs were obtained by field en-fission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HR-TEM). The as-grown boron nitride nanowires have a wire-like morphology with diameter in the range of similar to 20-150 nm. The Raman spectrum of the synthesized BNNWs showed a sharp and intense peak at 1380 (cm(-1)) corresponds to the E-2g mode of vibration in h-BN depicted its highly crystalline nature. This work reveals that a modified CVD technique and short growth duration is suitable to synthesis nanowires with tens of nanometers in diameter. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：14727 / 14732

页数：6

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