Electron transport via local polarons at interface atoms

被引:47
作者
Berthe, M.
Urbieta, A.
Perdigao, L.
Grandidier, B.
Deresmes, D.
Delerue, C.
Stievenard, D.
Rurali, R.
Lorente, N.
Magaud, L.
Ordejon, P.
机构
[1] Univ Toulouse 3, LCAR, UMR 5589, F-31062 Toulouse, France
[2] CNRS, IEMN, UMR 8520, Inst Elect Microelect & Nanotechnol,Dept ISEN, F-59046 Lille, France
[3] CNRS, LEPES, F-38042 Grenoble 9, France
[4] CSIC, Inst Ciencia Mat Barcelona, E-08193 Barcelona, Spain
关键词
D O I
10.1103/PhysRevLett.97.206801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Electronic transport is profoundly modified in the presence of strong electron-vibration coupling. We show that in certain situations, the electron flow takes place only when vibrations are excited. By controlling the segregation of boron in semiconducting Si(111)-root 3 x root 3R30 degrees surfaces, we create a type of adatom with a dangling-bond state that is electronically decoupled from any other electronic state. However, probing this state with scanning tunnelling microscopy at 5 K yields high currents. These findings are rationalized by ab-initio calculations that show the formation of a local polaron in the transport process.
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页数:4
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