Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range

被引：24

作者：

de la Mare, M. ^{[1
]}

Zhuang, Q. ^{[1
]}

Krier, A. ^{[1
]}

Patane, A. ^{[3
]}

Dhar, S. ^{[2
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] Univ Calcutta, Dept Elect Sci, Kolkata 700009, India

[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

conduction bands; III-V semiconductors; indium compounds; molecular beam epitaxial growth; photoluminescence; plasma materials processing; semiconductor epitaxial layers; semiconductor growth; BAND-GAP; INAS; GAAS; MBE; ENERGY; PHOTOLUMINESCENCE; GAAS(001); BEHAVIOR; EPITAXY; LASER;

D O I：

10.1063/1.3187534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%-1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.

引用

页数：3

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