EUV wavefront metrology system in EUVA

被引：13

作者：

Hasegawa, T ^{[1
]}

Ouchi, C ^{[1
]}

Hasegawa, M ^{[1
]}

Kato, S ^{[1
]}

Suzuki, A ^{[1
]}

Sugisaki, K ^{[1
]}

Murakami, K ^{[1
]}

Saito, J ^{[1
]}

Niibe, M ^{[1
]}

机构：

[1] EUVA, EUV Metrol Technol Res Dept, Utstunomiya Lab, Utsunomiya, Tochigi 3213298, Japan

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES VIII | 2004年 / 5374卷

关键词：

interferometer; extreme ultraviolet lithography; EUV; at-wavelength; undulator;

D O I：

10.1117/12.536327

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An Experimental extreme ultraviolet (EUV) interferometer (EEI) using an undulator as a light source was installed in New SUBARU synchrotron facility at Himeji Institute of Technology (HIT). The EEI can evaluate the five metrology methods reported before.((1)) A purpose of the EEI is to determine the most suitable method for measuring the projection optics of EUV lithography systems for mass production tools.

引用

页码：797 / 807

页数：11