Reduction of native oxides on GaAs during atomic layer growth of Al2O3

被引：71

作者：

Lee, Hang Dong ^{[1
]}

Feng, Tian

Yu, Lei

Mastrogiovanni, Daniel

Wan, Alan

Gustafsson, Torgny

Garfunkel, Eric

机构：

[1] Rutgers State Univ, Dept Phys, Piscataway, NJ 08854 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 22期

基金：

美国国家科学基金会;

关键词：

aluminium compounds; gallium arsenide; III-V semiconductors; ion-surface impact; reduction (chemical); substrates; X-ray photoelectron spectra; SPECTROSCOPY; DEPOSITION;

D O I：

10.1063/1.3148723

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that similar to 65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 A thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.

引用

页数：3

共 12 条

[1] Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As [J].

Chang, C. -H. ;

Chiou, Y. -K. ;

Chang, Y. -C. ;

Lee, K. -Y. ;

Lin, T. -D. ;

Wu, T. -B. ;

Hong, M. ;

Kwo, J. .

APPLIED PHYSICS LETTERS, 2006, 89 (24)

[2] HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition [J].

Chen, P. T. ;

Sun, Y. ;

Kim, E. ;

McIntyre, P. C. ;

Tsai, W. ;

Garner, M. ;

Pianetta, P. ;

Nishi, Y. ;

Chui, C. O. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (03)

[3] CHARACTERIZATION OF PRECIPITATES IN ANODIC OXIDIZED GA1-XALXAS AND GA1-XINXAS BY LASER RAMAN-SPECTROSCOPY [J].

EGUCHI, K ;

KATODA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (08) :1043-1048

[4] HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition -: art. no. 152904 [J].

Frank, MM ;

Wilk, GD ;

Starodub, D ;

Gustafsson, T ;

Garfunkel, E ;

Chabal, YJ ;

Grazul, J ;

Muller, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3

[5]

GEOL N, 2006, APPL PHYS LETT, V89

[6] Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2x8)/(2x4) [J].

Hale, MJ ;

Yi, SI ;

Sexton, JZ ;

Kummel, AC ;

Passlack, M .

JOURNAL OF CHEMICAL PHYSICS, 2003, 119 (13) :6719-6728

[7] GaAs interfacial self-cleaning by atomic layer deposition [J].

Hinkle, C. L. ;

Sonnet, A. M. ;

Vogel, E. M. ;

McDonnell, S. ;

Hughes, G. J. ;

Milojevic, M. ;

Lee, B. ;

Aguirre-Tostado, F. S. ;

Choi, K. J. ;

Kim, H. C. ;

Kim, J. ;

Wallace, R. M. .

APPLIED PHYSICS LETTERS, 2008, 92 (07)

[8] Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 -: art. no. 252104 [J].

Huang, ML ;

Chang, YC ;

Chang, CH ;

Lee, YJ ;

Chang, P ;

Kwo, J ;

Wu, TB ;

Hong, M .

APPLIED PHYSICS LETTERS, 2005, 87 (25) :1-3

[9] Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers [J].

Kim, Hyoung-Sub ;

Ok, Injo ;

Zhang, Manhong ;

Lee, Tackhwi ;

Zhu, Feng ;

Yu, Lu ;

Lee, Jack C. .

APPLIED PHYSICS LETTERS, 2006, 89 (22)

[10] Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces [J].