Molecular dynamics study on femtosecond laser aided machining of monocrystalline silicon carbide

被引：27

作者：

Meng, Binbin ^{[1
,2
]}

Yuan, Dandan ^{[1
]}

Zheng, Jian ^{[1
]}

Xu, Shaolin ^{[1
]}

机构：

[1] Southern Univ Sci & Technol, Dept Mech & Energy Engn, Shenzhen 518055, Peoples R China

[2] Wuhan Univ, Sch Power & Mech Engn, Wuhan 430000, Hubei, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2019年 / 101卷

基金：

中国国家自然科学基金;

关键词：

SiC; Femtosecond laser; Surface modification; Deformation;

D O I：

10.1016/j.mssp.2019.05.022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To solve SiC machining processes problems such as low processing efficiency, surface/subsurface damage, and machining tool wear, a femtosecond-laser-aided machining process was studied. In this paper, the diamond-machinability and removal mechanism of SiC-modified layer during femtosecond-laser-aided machining process are evaluated at the nanoscale using molecular dynamics. The results show that micro/nano structures in the modified layer significantly influence the material removal process, and SiC surface structures effectively improve the removal efficiency and reduce subsurface damage depth. The surface micro/nano structures introduced by femtosecond laser scanning improve the diamond-machinability of mono-crystalline SiC.

引用

页码：1 / 9

页数：9

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