Investigation of switching mechanism in HfO2-based oxide resistive memories by in-situ Transmission Electron Microscopy (TEM) and Electron Energy Loss Spectroscopy (EELS)

被引：0

作者：

Dewolf, T. ^{[1
,2
]}

Cooper, D. ^{[1
,2
]}

Bernier, N. ^{[1
,2
]}

Delaye, V. ^{[1
,2
]}

Grenier, A. ^{[1
,2
]}

Grampeix, H. ^{[1
,2
]}

Charpin, C. ^{[1
,2
]}

Nardelli, F. ^{[1
,2
]}

Pauliac, S. ^{[1
,2
]}

Bernasconi, S. ^{[1
,2
]}

Jalaguier, E. ^{[1
,2
]}

Audoit, G. ^{[1
,2
]}

Schamm-Chardon, S. ^{[3
]}

机构：

[1] Univ Grenoble Alpes, F-38000 Grenoble, France

[2] CEA LETI, MINATEC Campus, F-38054 Grenoble, France

[3] Univ Toulouse, CEMES CNRS, 29 Rue Jeanne Marvig, Toulouse, France

来源：

ISTFA 2017: CONFERENCE PROCEEDINGS FROM THE 43RD INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS | 2017年

基金：

欧洲研究理事会;

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：371 / 374

页数：4

共 5 条

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