Accurate Time Constant of Random Telegraph Signal Extracted by a Sufficient Long Time Measurement in Very Large-Scale Array TEG

被引:13
作者
Fujisawa, T. [1 ]
Abe, K. [1 ]
Watabe, S. [1 ]
Miyamoto, N. [2 ]
Teramoto, A. [2 ]
Sugawa, S. [1 ]
Ohmi, T. [2 ]
机构
[1] Tohoku Univ, Grad Sch Engn, Aoba Ku, Aza Aoba 6-6-10, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan
来源
ICMTS 2009: 2009 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES | 2009年
关键词
D O I
10.1109/ICMTS.2009.4814601
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To suppress Random Telegraph Signal (RTS) noise in MOSFETs, it is necessary to understand the phenomena of RTS. We can extract the accurate time constant in RTS noise by measuring a huge number of MOSFETs during a long time. Time constant is useful to obtain the energy level. In this paper, we demonstrated the statistical and accurate measurement method of the time constant of RTS by a sufficient long measuring in very large-scale array TEG.
引用
收藏
页码:19 / +
页数:2
相关论文
共 8 条
[1]   Random telegraph signal statistical analysis using a very large-scale array TEG with IM MOSFETs [J].
Abe, K. ;
Sugawa, S. ;
Watabe, S. ;
Miyamoto, N. ;
Teramoto, A. ;
Kamata, Y. ;
Shibusawa, K. ;
Toita, M. ;
Ohmi, I. .
2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2007, :210-+
[2]   NOISE IN SOLID-STATE MICROSTRUCTURES - A NEW PERSPECTIVE ON INDIVIDUAL DEFECTS, INTERFACE STATES AND LOW-FREQUENCY (1/F) NOISE [J].
KIRTON, MJ ;
UREN, MJ .
ADVANCES IN PHYSICS, 1989, 38 (04) :367-468
[3]  
KURATA H, RANDOM TELEGRAPH SIG
[4]   New era of silicon technologies due to radical reaction based semiconductor manufacturing [J].
Ohmi, T ;
Hirayama, M ;
Teramoto, A .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (01) :R1-R17
[5]   DISCRETE RESISTANCE SWITCHING IN SUBMICROMETER SILICON INVERSION-LAYERS - INDIVIDUAL INTERFACE TRAPS AND LOW-FREQUENCY (1-F QUESTIONABLE) NOISE [J].
RALLS, KS ;
SKOCPOL, WJ ;
JACKEL, LD ;
HOWARD, RE ;
FETTER, LA ;
EPWORTH, RW ;
TENNANT, DM .
PHYSICAL REVIEW LETTERS, 1984, 52 (03) :228-231
[6]  
Wang X., 2006, IEDM, P115
[7]  
WATABE S, JPN J APPL PHY, V46, P2054
[8]  
WATABE S, ICMTS 2009