Photophysics and Electronic Structure of Lateral Graphene/MoS2 and Metal/MoS2 Junctions

被引：16

作者：

Subramanian, Shruti ^{[1
,2
]}

Campbell, Quinn T. ^{[1
,3
]}

Moser, Simon K. ^{[4
,5
,6
]}

Kiemle, Jonas ^{[7
,8
]}

Zimmermann, Philipp ^{[7
,8
]}

Seifert, Paul ^{[7
,8
,9
]}

Sigger, Florian ^{[7
,8
]}

Sharma, Deeksha ^{[10
]}

Al-Sadeg, Hala ^{[1
]}

Labella, Michael, III ^{[11
]}

Waters, Dacen ^{[12
]}

Feenstra, Randall M. ^{[12
]}

Koch, Roland J. ^{[4
]}

Jozwiak, Chris ^{[4
]}

Bostwick, Aaron ^{[4
]}

Rotenberg, Eli ^{[4
]}

Dabo, Ismaila ^{[1
]}

Holleitner, Alexander W. ^{[7
,8
]}

Beechem, Thomas E. ^{[13
]}

Wurstbauer, Ursula ^{[7
,8
,14
]}

Robinson, Joshua A. ^{[15
,16
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Penn State Univ, Ctr 2 Dimens & Layered Mat, University Pk, PA 16802 USA

[3] Sandia Natl Labs, Ctr Comp Res, POB 5800, Albuquerque, NM 87185 USA

[4] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

[5] Univ Wurzburg, Phys Inst, D-97074 Wurzburg, Germany

[6] Univ Wurzburg, Wurzburg Dresden Cluster Excellence Ctqmat, D-97074 Wurzburg, Germany

[7] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[8] Tech Univ Munich, Phys Dept, D-85748 Garching, Germany

[9] Barcelona Inst Sci & Technol, ICFO Inst Ciencies Foton, Barcelona 08860, Spain

[10] Penn State Univ, Dept Mech Engn, University Pk, PA 16802 USA

[11] Penn State Univ, Nanofabricat Facil, University Pk, PA 16802 USA

[12] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[13] Sandia Natl Labs, Ctr Integrated Nanotechnol, POB 5800, Albuquerque, NM 87185 USA

[14] Univ Munster, Inst Phys, D-48149 Munster, Germany

[15] Penn State Univ, Dept Mat Sci & Engn, Ctr 2 Dimens & Layered Mat, 2 Dimens Crystal Consortium, University Pk, PA 16802 USA

[16] Penn State Univ, Ctr Atomically Thin Multifunct Coatings, University Pk, PA 16802 USA

来源：

ACS NANO | 2020年 / 14卷 / 12期

基金：

瑞士国家科学基金会; 美国国家科学基金会;

关键词：

photocurrent; graphene contacts; heterostructure; ARPES; Schottky barrier; molybdenum disulfide; first-principles calculations; DENSITY-FUNCTIONAL THEORY; QUANTUM DOTS; 2-DIMENSIONAL MATERIALS; CATALYSIS; OPTOELECTRONICS; PHOTOCURRENT; GAS;

D O I：

10.1021/acsnano.0c02527

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x larger photocurrent is extracted at the EG/MoS2 interface when compared to the metal (Ti/Au)/MoS2 interface. This is supported by semi-local density functional theory (DFT), which predicts the Schottky barrier at the EG/MoS2 interface to be similar to 2x lower than that at Ti/MoS2. We provide a direct visualization of a 2D material Schottky barrier through combination of angle-resolved photoemission spectroscopy with spatial resolution selected to be similar to 300 nm (nano-ARPES) and DFT calculations. A bending of similar to 500 meV over a length scale of similar to 2-3 mu m in the valence band maximum of MoS2 is observed via nanoARPES. We explicate a correlation between experimental demonstration and theoretical predictions of barriers at graphene/TMD interfaces. Spatially resolved photocurrent mapping allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces. This simple probe-based technique also speaks directly to the 2D synthesis community to elucidate electronic uniformity at domain boundaries alongside morphological uniformity over large areas.

引用

页码：16663 / 16671

页数：9

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