Formation and shape control of InAsSb/InP (001) nanostructures

被引：20
作者：
Lei, W. [1 ]
Tan, H. H. [1 ]
Jagadish, C. [1 ]
机构：
[1] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 01期
基金：
澳大利亚研究理事会;
关键词：
INAS1-XSBX QUANTUM STRUCTURES; MU-M PHOTOLUMINESCENCE; GROWTH; DOTS; INP; TEMPERATURE; ISLANDS;
D O I：
10.1063/1.3160738
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper presents a study on the formation and shape control of InAsSb/InP nanostructures on InP (001) substrates. For the formation of InAsSb nanostructures, incorporation of Sb atoms into InAs islands results in significant morphology change in the islands due to the surfactant effect of Sb atoms and the large strain in the system. And, shape control of InAsSb/InP nanostructures is achieved by optimizing their growth parameters. Low growth temperature and high growth rate will induce the formation of InAsSb elongated quantum dots, while high growth temperature and low growth rate will promote the formation of InAsSb quantum wires or dashes. c 2009 American Institute of Physics. [DOI: 10.1063/1.3160738]
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页数：3
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