Optical second-harmonic interferometric spectroscopy of Si(111)-SiO2 interface in the vicinity of E2 critical points -: art. no. 033305

被引：13

作者：

Dolgova, TV ^{[1
]}

Fedyanin, AA

Aktsipetrov, OA

Marowsky, G

机构：

[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia

[2] Laser Lab Gottingen EV, D-37077 Gottingen, Germany

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.66.033305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The direct electron transitions at the Si(111)-SiO2 interface are studied by combined second-harmonic (SH) intensity and phase spectroscopy with the SH photon energy range from 3.5 eV to 5 eV. A strong resonant behavior of the quadratic optical response is observed in the vicinity of the E-2(X,Sigma) critical points (CP's) of the silicon band structure. Good representation of the experimental SH intensity and phase spectra is provided by a line shape of the quadratic susceptibility calculated both with excitonic and two-dimensional (2D) types of E-2(X,Sigma) CP's. The line-shape dependence of resonance energies, namely, repulsion of nearby E-2(X,Sigma) resonances in the case of a 2D CP in comparison with the excitonic ones, is observed.

引用

页码：333051 / 333054

页数：4

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