Current Compliance-Dependent Nonlinearity in TiO2 ReRAM

被引：34

作者：

Lentz, Florian ^{[1
,2
]}

Roesgen, Bernd ^{[1
,2
]}

Rana, Vikas ^{[1
,2
]}

Wouters, Dirk J. ^{[3
,4
]}

Waser, Rainer ^{[1
,5
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany

[2] JARA Fundamentals Future Informat Technol, D-87027 Julich, Germany

[3] Interuniv Microelect Ctr, B-3001 Louvain, Belgium

[4] Ethiopian Satellite Televis, B-3001 Louvain, Belgium

[5] Rhein Westfal TH Aachen, Inst Mat Elect Engn & Informat Technol 2, D-52062 Aachen, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 08期

关键词：

MOSFET; nonlinearity; RESET; resistive RAM (ReRAM); SET; TiO2;

D O I：

10.1109/LED.2013.2265715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nonvolatile redox-based resistive RAM (ReRAM) is considered to be a promising candidate for passive nanocrossbar integration. For this application, a high degree of nonlinearity in I-V characteristics of the ReRAM device is required. In this letter, the nonlinearity parameter as a function of forming/SET current compliance in a MOSFET-integrated TiN/TiO2/Ti/Pt ReRAM device is investigated. The nonlinearity parameter in the ReRAM device improves at the lower SET current compliance. This is due to scaling down the conductive filaments during the forming and the SET process. The nonlinearity is further increased by scaling down the oxide thickness that is accompanied by a reduction of the switching current.

引用

页码：996 / 998

页数：3

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