HgS nanoparticles: Structure and optical properties

被引:29
作者
Patel, B. K. [1 ]
Rath, S. [1 ]
Sarangi, S. N. [1 ]
Sahu, S. N. [1 ]
机构
[1] Inst Phys, Bhubaneswar 751005, Orissa, India
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2007年 / 86卷 / 04期
关键词
D O I
10.1007/s00339-006-3812-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanocrystalline HgS thin films were synthesized by using an electrochemical route under galvanostatic conditions. Quantum size effects have resulted in the change of the semi-metallic behavior of bulk beta-HgS (E-g=-0.5 eV) to semiconducting behavior with an absorption onset around 1.4 eV as confirmed from optical absorption studies. Glancing angle X-ray diffraction analysis confirms the presence of beta-HgS (zinc-blend structure) with prominent crystallographic planes of (200), (220) and (311) in the deposit. This is consistent with results obtained from transmission electron diffraction studies. The Raman scattering measurements identified a broad 1LO confined phonon mode at 247 cm(-1) which suggests that the crystalline sizes are small.
引用
收藏
页码:447 / 450
页数:4
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