Electric-pulse-induced resistance change in Ba0.5Sr0.5Co0.2Fe0.8O3 thin films

被引：1
|
作者：
Xing, Z. W. [1 ,2 ,3 ,4 ]
Wu, N. J. [3 ,4 ]
Ignatiev, A. [3 ,4 ]
机构：
[1] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[3] Univ Houston, Dept Phys, Houston, TX 77204 USA
[4] Univ Houston, Ctr Adv Mat, Houston, TX 77204 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 02期
关键词：
barium compounds; cobalt compounds; random-access storage; Schottky barriers; semiconductor thin films; strontium compounds; vacancies (crystal);
D O I：
10.1063/1.3290948
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Five-component perovskite Ba0.5Sr0.5Co0.2Fe0.8O3 (BSCFO) thin films are reported to have polarized electrical-pulse-induced resistance (EPIR) change at room temperature. Such an EPIR change is attributed to a combined effect of the resistance change in the Schottky barrier and the oxygen ion/vacancy movement near the interface. In the BSCFO, the lower threshold voltage of the electric pulse that leads to nonvolatile resistive changes is closely related to its higher oxygen permeability.
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页数：3
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