Hydrogen-controlled crystallinity of 3C-SiC film on Si(001) grown with monomethylsilane

被引：8

作者：

Narita, Yuzuru ^{[1
]}

Konno, Atsushi

Nakazawa, Hideki

Itoh, Takashi

Yasui, Kanji

Endoh, Tetsuo

Suemitsu, Maki

机构：

[1] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan

[2] Hirosaki Univ, Dept Mat Sci & Technol, Fac Sci & Technol, Hirosaki, Aomori 0368561, Japan

[3] Nagaoka Univ Technol, Dept Elect Engn, Niigata 9402188, Japan

[4] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 1-3期

关键词：

silicom carbide; monomethylsilane; hydrogen adsorption/desorption; phase diagram; Si(001);

D O I：

10.1143/JJAP.46.L40

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heteroepitaxial growth of 3C-SiC has been conducted on Si(001) substrate using monomethylsilane as a single source gas. By evaluating the crystalliniy of the film as a function of the growth temperature T and pressure P, a process window for a good epitaxy has been obtained, which is expressed as P-cl (T) < P < P-c2(T). Both of the two critical pressures increase with T, and are both successfully expressed with a single analytical function derived from the hydrogen adsorption/desorption balance on the surface.

引用

页码：L40 / L42

页数：3

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