Structural, electrical and optical properties of Bi-doped CuInS2 thin films grown by vacuum evaporation method

被引：20

作者：

Akaki, Y. ^{[1
]}

Matsuo, H. ^{[2
]}

Yoshin, K. ^{[2
]}

机构：

[1] Miyakonojo Natl Coll Technol, Dept Elect Engn, 473-1 Yoshio, Miyazaki 8858567, Japan

[2] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 889 2192, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 8 | 2006年 / 3卷 / 08期

关键词：

D O I：

10.1002/pssc.200669626

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Structural, electrical and optical properties of Bi-doped CuInS2 thin films prepared by a single-source thermal evaporation method were investigated. The as-deposited films were annealed in the temperature range between 100 and 500 degrees C for 10 min in air. The film of chalcopyrite CuInS2 single phase was obtained by annealing at 200 degrees C successfully. It was found that Bi atoms enhanced the growth of CuInS2 single phase at lower temperature. Furthermore, the crystalline quality of doped films was higher compared with the non-doped ones. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2597 / +

页数：2

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