Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate

被引：75
作者：
Kanno, Hiroshi [1 ]
Toko, Kaoru [1 ]
Sadoh, Taizoh [1 ]
Miyao, Masanobu [1 ]
机构：
[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 18期
关键词：
D O I：
10.1063/1.2374849
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Metal-induced lateral crystallization (MILC) of amorphous SiGe films on SiO2 has been investigated as a function of Ge fraction (0%-100%) and annealing temperature (320-550 degrees C). High temperature annealing (> 500 degrees C) caused spontaneous nucleation in amorphous SiGe with a high Ge fraction (> 70%). This suppressed the progress of MILC. Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (< 400 degrees C). As a result, large poly-SiGe regions (> 20 mu m) were observed around Ni patterns even for high Ge fractions (> 70%). In this way, MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0%-100%). (c) 2006 American Institute of Physics.
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