Assessing the applicability of quantum corrections to classical thermal conductivity predictions

被引:184
作者
Turney, J. E. [1 ]
McGaughey, A. J. H. [1 ]
Amon, C. H. [1 ,2 ]
机构
[1] Carnegie Mellon Univ, Dept Mech Engn, Pittsburgh, PA 15213 USA
[2] Univ Toronto, Dept Mech & Ind Engn, Toronto, ON M5S 3G8, Canada
基金
美国安德鲁·梅隆基金会;
关键词
elemental semiconductors; phonons; silicon; thermal conductivity; MOLECULAR-DYNAMICS SIMULATION; PATH CENTROID DENSITY; SILICON; FORMULATION; CRYSTAL; DIAMOND;
D O I
10.1103/PhysRevB.79.224305
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The validity of the commonly used quantum corrections for mapping a classically predicted thermal conductivity onto a corresponding quantum value are assessed by self-consistently predicting the classical and quantum thermal conductivities of a crystalline silicon system via lattice-dynamics calculations. Applying the quantum corrections to the classical predictions, with or without the zero-point energy, does not bring them into better agreement with the quantum predictions compared to the uncorrected classical values above temperatures of 200 K. By examining the mode dependence of the phonon properties, we demonstrate that thermal conductivity cannot be quantum corrected on a system level. We explore the source of the differences in the quantum and classical phonon relaxation times on a mode-by-mode basis.
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页数:7
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