Ultrahigh Recovery of Fracture Strength on Mismatched Fractured Amorphous Surfaces of Silicon Carbide

被引:58
|
作者
Cui, Junfeng [1 ]
Zhang, Zhenyu [1 ]
Jiang, Haiyue [1 ]
Liu, Dongdong [1 ]
Zou, Li [2 ,3 ]
Guo, Xiaoguang [1 ]
Lu, Yao [4 ]
Parkin, Ivan P. [5 ]
Guo, Dongming [1 ]
机构
[1] Dalian Univ Technol, Minist Educ, Key Lab Precis & Nontradit Machining Technol, Dalian 116024, Peoples R China
[2] Dalian Univ Technol, Sch Naval Architecture, State Key Lab Struct Anal Ind Equipment, Dalian 116024, Peoples R China
[3] Collaborat Innovat Ctr Adv Ship & Deep Sea Explor, Shanghai 200240, Peoples R China
[4] Queen Mary Univ London, Sch Biol & Chem Sci, Dept Chem, London E1 4NS, England
[5] UCL, Dept Chem, Mat Chem Res Ctr, 20 Gordon St, London WC1H 0AJ, England
基金
芬兰科学院; 国家重点研发计划;
关键词
fracture strength; in situ TEM; nanomechanical test; molecular dynamics; SiC; BRITTLE SEMICONDUCTOR NANOWIRES; SIC NANOWIRES; MECHANICAL-PROPERTIES; INDUCED AMORPHIZATION; COHERENT CONTROL; DEFORMATION; NANOGENERATOR; PLASTICITY; STRAIN; SPINS;
D O I
10.1021/acsnano.9b02658
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Nanowires (NWs) have been envisioned as building blocks of nanotechnology and nanodevices. In this study, NWs were manipulated using a weasel hair and fixed by conductive silver epoxy, eliminating the contaminations and damages induced by conventional beam depositions. The fracture strength of the amorphous silicon carbide was found to be 8.8 GPa, which was measured by in situ transmission electron microscopy nanomechanical testing, approaching the theoretical fracture limit. Here, we report that self-healing of mismatched fractured amorphous surfaces of brittle NWs was discovered. The fracture strength was found to be 5.6 GPa on the mismatched fractured surfaces, recovering 63.6% of that of pristine NWs. This is an ultrahigh recovery, due to the limits of reconstruction of dangling bonds on the fractured amorphous surfaces and the mismatched areas. Simulation by molecular dynamics showed fracture strength recovery of 65.9% on the mismatched fractured amorphous surfaces, which is in good agreement with the experimental results. Healing on the mismatched fractured amorphous surfaces is by reorganization of Si-C bonds forming Si-C and Si Si bonds. The potential energy increases 2.6 eV in the reorganized Si-C bonds and decreases by 3.2 and 1.9 eV, respectively, in the formed Si-C and Si Si bonds. These findings provide insights for the reliability, design, and fabrication of high performance NW-based devices, to avoid catastrophic failure working in harsh and extreme environments.
引用
收藏
页码:7483 / 7492
页数:10
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