Study of microstructure and electromagnetic properties of the low temperature sintering Bi-substitution yttrium iron garnet
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作者:
Zhao, HJ
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Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R ChinaTsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
Zhao, HJ
[1
]
Zhou, J
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机构:
Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R ChinaTsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
Zhou, J
[1
]
Gui, ZL
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机构:
Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R ChinaTsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
Gui, ZL
[1
]
Li, LT
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Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R ChinaTsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
Li, LT
[1
]
机构:
[1] Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
yttrium iron garnet;
Bi-substitution;
low temperature sintering;
magnetic properties;
dielectric properties;
D O I:
暂无
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Microstructure and electromagnetic properties of the low temperature sintering Bi-substitution yttrium iron garnet (YIG) were studied. Materials of Bi-substitution YIG were prepared by solid-state reaction method. The phase formation and microstructure of samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Magnetic and dielectric spectra with real part and imaginary part were measured using an impedance analyzer. Bulk electrical resistivity was determined using pA meter/DC voltage source. The results show that Bi-substitution can lower phase formation temperature and sintering temperature, and leads to an increase in dielectric constant and a decrease in bulk electrical resistivity of YIG, The mechanism of the influence of Bi-substitution on magnetic properties and dielectric properties is discussed.